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7MBR50SB120
IGBT MODULE (S series) 1200V / 50A / PIM
IGBT Modules
Features
* Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 20 75 50 150 100 50 360 1200 20 35 25 70 50 180 1200 1600 50 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V N*m
Continuous
Tc=25C Tc=80C Tc=25C Tc=80C
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake
1 device
Continuous 1ms 1 device
Tc=25C Tc=80C Tc=25C Tc=80C
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=50A VGE=15V RG=24 IF=50A chip terminal Min.
7MBR50SB120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.3 2.7 6000 0.35 0.25 0.1 0.45 0.08 2.3 2.5 1.2 0.6 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Inverter
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage
Converter
Thermistor
Reverse current Resistance B value
IF=50A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=25A, VGE=15V chip terminal VCC=600V IC=25A VGE=15V RG=51 VR=1200V IF=50A chip terminal VR=1600V T=25C T=100C T=25/50C
2.1 2.25 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
mA V mA K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.35 0.75 0.69 0.50 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ]
[T h e rm is to r]
8
2 0 (G u) 1 8 (G v) 1 6 (G w )
9
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
7MBR50SB120
[ Inverter ] Collector current vs. Collector-Emitter voltage
120
[ Inverter ] Collector current vs. Collector-Emitter voltage
120
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 100
15V 12V 100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
80
80
10V 60
60
10V
40
40
20
20 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
100
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
80
6
60
4 Ic= 100A 2 Ic= 50A Ic= 25A
40
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
20000
o
[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25
1000
o
C
C
25
10000 800 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ]
600
15
1000
400
10
Coes Cres
200
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 100 200 300 400 Gate charge : Qg [ nC ]
0 500
IGBT Modules
7MBR50SB120
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24, Tj=25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24, Tj=125C
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton tr
tr
tf 100
100 tf
50 0 20 40 Collector current : Ic [ A ] 60 80
50 0 20 40 Collector current : Ic [ A ] 60 80
[ Inverter ] Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=15V, Tj=25C
5000 14
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24
ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ]
12
Eon(125 C)
o
10
1000
8
Eon(25 C)
o
500
6
Eoff(125 C)
o
4
Eoff(25 C) Err(125 C)
o
o
100
tf
2 Err(25 C)
o
50 10 50 100
]
0 500 0 20 40 60 80 100 Gate resistance : Rg [ Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.)
[ Inverter ] Reverse bias safe operating area
120
Vcc=600V, Ic=50A, VGE=15V, Tj=125C
40
+VGE=15V, -VGE<15V, Rg>24, Tj<125C = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 30 Collector current : Ic [ A ] Eoff Err 10 50 100
]
100
80
20
60
40
10 20
0 Gate resistance : Rg [
0 500 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR50SB120
[ Inverter ] Forward current vs. Forward on voltage (typ.)
120 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=24
Tj=125 C 100
o
Tj=25 C trr(125 C) Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ]
o
o
Forward current : IF [ A ]
80
100 trr(25 C)
o
60
40
Irr(125 C)
o
Irr(25 C)
o
20
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 20 40 Forward current : IF [ A ] 60 80
[ Converter ] Forward current vs. Forward on voltage (typ.)
120
100
Tj= 25 C
o
Tj= 125 C
o
Forward current : IF [ A ]
80
60
40
20
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
3 200 100 1 Thermal resistanse : Rth(j-c) [ C/W ]
[ Thermistor ] Temperature characteristic (typ.)
FWD[Inverter] IGBT[Brake] Conv. Diode Resistance : R [ k ] 1 IGBT[Inverter] 10
o
0.1
1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
0
20
40
60
80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
IGBT Modules
7MBR50SB120
[ Brake ] Collector current vs. Collector-Emitter voltage
60
[ Brake ] Collector current vs. Collector-Emitter voltage
60
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 50
15V
12V 50
VGE= 20V
15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
40
40
10V 30
30
10V
20
20
10
10 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
60 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
50
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
40
6
30
4 Ic= 50A 2 Ic= 25A Ic= 12.5A
20
10
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
10000
o
[ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25
1000
o
C
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies
20 Gate - Emitter voltage : VGE [ V ]
600
15
1000
400
10
Coes Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
200
5
0 0 50 100 150 200 Gate charge : Qg [ nC ]
0 250
IGBT Modules
Outline Drawings, mm
7MBR50SB120
M712
8-R2.250.3 4-o5.50.3 13.09 15.24
21 20
1221 1100.3 19.05
19 18
94.50.3 19.05
17 16
15.24
15 14
3.81
4=15.24
10
11.5
+0.5 0
19.697
3.81 99.60.3
9
621 500.3 11.43 11.43
22
11.5 39.90.3 3.81 15.475 15.24
23
+0.5 0
7
11.665
3.81
24
1
2
3
4
5
6
4.198
4.055
14.995
15.24
15.24
15.24
15.24
15.24
A A 22.86
1.50.3
o0.4
o2.50.1
0.80.2
o2.10.1
3.50.5
1.10.3
Section A-A
2.90.3 6.50.5
20.51 171
Shows theory dimensions
10.2
60.3
1.150.2
57.50.3
3.81
8

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